jul. 2002 3.5 0.2 2.2 0.2depth 3.5 0.2 2.2 0.2depth 75max 47 type name 26 0.5 0.4min 0.4min conditions applied for all condition angles f = 60hz, sinewave = 180 , t f =76 c one half cycle at 60hz, t j =125 c start i fm =500a, v r = 2250v, t j = 25/125 c (see fig. 1, 2) (recommended value 23.5kn) typical value 530g 785 500 10 4.2 10 5 2000 ?0 ~ 125 ?0 ~ 150 22 ~ 28 mitsubishi soft recovery diode fd500jv-90da high power, high frequency press pack type fd500jv-90da outline drawing dimensions in mm application high-power inverters clamp diode for gct thyristor power supplies as high frequency rectifiers ? v rrm repetitive peak reverse voltage ................... 4500v ? i t(av) average on-state current ...................... 500a rms forward current average forward current surge forward current current-squared, time integration critical rate of rise of reverse recovery current operation junction temperature storage temperature mounting force required weight a a ka a 2 s a/ s c c kn g i f(rms) i f(av) i fsm i 2 t d i /d t t j t stg unit symbol v rrm v rsm v r(dc) repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage parameter v v v symbol parameter unit ratings maximum ratings 4500 4500 3600 voltage class conditions forward voltage repetitive peak reverse current reverse recovery charge reverse recovery energy thermal resistance v fm i rrm q rr erec r th(j-f) v ma c j/p k/w symbol parameter test conditions limits min. typ. max. unit electrical characteristics i fm = 1570a, t j = 125 c v rm = 4500v, t j = 125 c i fm = 500a, d i /d t = 1000a/ s, v r = 2250v, t j = 125 c (see fig. 1, 2) junction to fin 4 3.5 80 1500 0.027
jul. 2002 mitsubishi soft recovery diode fd500jv-90da high power, high frequency press pack type fig. 1 reverse recovery test circuit fig. 2 reverse recovery waveform performance curves rc l(load) tud gct cdi cc v d anl 0 90%i rm di/dt(0 ~ 50%i rm ) v rm trr i t 50%i rm 50%i t q rr =(trr i rm )/2 v r i f (a) v fm (v) maximum on state characteristic 1 0 234567 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 t j =125 c t j =25 c 0 erec vs i f (typical) i f (a) erec (j/p) 100 200 300 500 400 600 700 0 800 1 2 3 4 5 6 7 time (s) zth (k/w) 10 -2 10 -1 10 0 10 0 23 5710 1 10 -3 0.01 0 0.02 0.03 0.04 condition v r = 2250v, t j =125 c d i /d t = 1000a/ s maximum thermal impedance characteristic (junction to fin)
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